ECE437H1

UTSG

VLSI Technology

The introduction to VLSI fabrication techniques, integrated circuit designs and advanced semiconductor devices will give a proper perspective of the past, present and future trends in the VLSI industry. Following the evolution of MOS and bipolar devices, digital and analog CMOS, BiCMOS, deep submicron CMOS, SOI-CMOS, RF-CMOS and HV-CMOS technologies will be studied. Special attention will be given to the physical scaling limits such as short channel effects. In addition, CAD tools and design methodology for the development of advanced semiconductor devices and integrated circuits will be introduced in the laboratory environment. These include the simulation of device fabrication, device characteristics, device modeling, circuit layout, design verification. Finally, advanced technology such as GaN HEMTs, graphene devices, carbon nano-tube devices, power devices, heterojunctions, InP and GaSb HBTs will also be studied.

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Prereq: (ECE331H1 or ECE334H1 or ECE354H1) and (ECE335H1 or ECE350H1)Excl: ECE535H1 and ECE534H1
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Course Info

DepartmentECE
CampusUTSG (St. George)
Level400
Hours36.6L/36.6P
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